Home Power management Power switches Solid-state relays

TPSI2140-Q1

ACTIVE

Automotive 1200-V 50-mA isolated switch with 2-mA avalanche rating

Product details

Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 13
Type Title Date
* Data sheet TPSI2140-Q1 1200-V, 50-mA, Automotive Isolated Switch With 2-mA Avalanche Rating datasheet (Rev. B) PDF | HTML 02 Jun 2023
Application brief Implementing an Isolated Switch for Relay Welding Detection PDF | HTML 15 Aug 2024
Application note Basics of Solid-State Relays PDF | HTML 24 Jul 2024
White paper 設計更安全、更智慧且更緊密相連的電池管理系統 PDF | HTML 24 Jan 2024
White paper 더욱 안전하고 스마트하며 더욱 연결된 배터리 관리 시스템 설계 PDF | HTML 24 Jan 2024
White paper Designing Safer, Smarter and More Connected Battery Management Systems PDF | HTML 23 Jan 2024
Technical article How solid-state relays simplify insulation monitoring designs in high-voltage applications PDF | HTML 04 Jan 2024
Functional safety information TPSI2140-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA (Rev. A) PDF | HTML 14 Jun 2023
EVM User's guide TPSI2140-Q1 Evaluation Module User's Guide (Rev. A) PDF | HTML 05 Jun 2023
Product overview When to use SSR or Isolated Gate Driver PDF | HTML 04 Aug 2022
Technical article How to design high-voltage systems with higher reliability while reducing solution PDF | HTML 08 Jun 2022
Technical article How to achieve higher-reliability isolation and a smaller solution size with solid PDF | HTML 09 May 2022
Certificate TPSI2140Q1EVM EU RoHS Declaration of Conformity (DoC) (Rev. A) 05 Apr 2022

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TPSI2140Q1EVM — TPSI2140-Q1 evaluation module for 1200-V 50-mA isolated switch with 2-mA avalanche rating

The TPSI2140Q1EVM evaluation module is a two-copper layer board containing multiple test points and jumpers in order to fully evaluate the functionality of the device.

User guide: PDF | HTML
Not available on TI.com
Simulation tool

CMSO-3P-BCS — comemso battery cell simulator

The Battery Cell Simulator (BCS) is the core of any test Battery Management System (BMS). It allows the simulation of all required states and faults for the BMS on the cell level.
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-010272 — 1500V high-voltage rack monitor unit reference design for energy storage systems

This reference design is a high-voltage, current and insulation impedance accuracy lithium-ion (Li-ion), LiFePO4 battery rack. The design monitors four high-voltage bus inputs, one shunt current and temperature, and one insulation impedance of the battery. The design protects the battery rack to (...)
Design guide: PDF
Reference designs

TIDA-010232 — AFE for insulation monitoring in high-voltage EV charging and solar energy reference design

This reference design features an electric bridge DC insulation monitoring (DC-IM) method which allows an accurate symmetrical and asymmetrical insulation leakage detection mechanism and an isolation resistance detection mechanism. We present a new generation of isolated amplifiers and switchers (...)
Design guide: PDF
Reference designs

TIDA-01513 — Automotive High-Voltage and Isolation Leakage Measurements Reference Design

The function of this reference design is to monitor the isolation resistance of a high-voltage bus to the chassis ground. Monitoring the isolation strength of coupling devices and components from high voltage to the chassis ground is a necessary feature in HEV’s and EV’s as battery (...)
Design guide: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
SOIC (DWQ) 11 Ultra Librarian

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos